GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards, graphics cards, and hardware solutions, today announced the B660 and H610 motherboards which deliver formidable and flexible platform to users. Featuring up to 16+1+1 phases DrMOS VRM design with each phase holding up to 60 amps and fully covered thermal design, GIGABYTE B660 and H610 lineup can perfectly support the latest 12th Gen Intel Core processors. The two memory configuration of DDR4 and DDR5 with exciting XMP functions delivers remarkable performance, as well as superior storage performance, expansions, and flexible network, GIGABYTE B660 and H610 lineup brings incredible performance beyond users’ expectation.
Started from B560 chipsets, Intel brought into the memory overclocking feature to the latest B660 chipset with support of both DDR4 and DDR5 which earned user’s favor on B-series. To enable stable power for CPU under high-speed operation and to enhance XMP overclocking on memory, GIGABYTE B660 AORUS and GAMING series motherboards adopt up to 16+1+1 power phases with 60 Amp each phase. AORUS lineup also equip full-covered heatsink and 5 W/mK thermal pad for advanced heat dissipation and improved stability on VRM area.
