Samsung Electronics, today announced its demonstration of the world’s first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). The paper on this innovation was published online by Nature on January 12, and is set to be published in the upcoming print edition of Nature. Titled ‘A crossbar array of magnetoresistive memory devices for in-memory computing’, this paper showcases Samsung’s leadership in memory technology and its effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips.
The research was led by Samsung Advanced Institute of Technology (SAIT) in close collaboration with Samsung Electronics Foundry Business and Semiconductor R&D Center. The first author of the paper, Dr. Seungchul Jung, Staff Researcher at SAIT, and the co-corresponding authors Dr. Donhee Ham, Fellow of SAIT and Professor of Harvard University and Dr. Sang Joon Kim, Vice President of Technology at SAIT, spearheaded the research.
