Fujitsu Semiconductor Memory Solution Limited has launched new 8 Mbit FRAM MB85R8M2TA with parallel interface, which is the first product to guarantee 100 trillion read/write cycle times in Fujitsu’s FRAM product family. Evaluation samples are currently available. The new product achieves both high-speed operations, approximately 30% faster access speed, and low power consumption, 10% less operating current, compared to Fujitsu’s conventional products. This memory IC is an ideal replacement of SRAM in the industrial machines that require high-speed operation.
FRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years. Fujitsu has been providing 8 Mbit FRAM MB85R8M2T with parallel interface since June 2018. While promoting the product, the company heard voices of customer requirements such as guaranteed writing endurance of more than 10 trillion times, operation as fast as SRAM and TSOP package compatibility to SRAM. Fujitsu is now pleased to introduce its new 8 Mbit FRAM product satisfying these requirements, maintaining FRAM’s unique feature of lower power consumption.
